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Chemical Mechanical Polishing Optimization For 4H-Sic by Craig L. Neslen (2012, Trade Paperback)
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Previous studies reported increased material removal rates associated with increasing polishing temperature, slurry pH, pressure, and polishing pad speed. Photographs at specific wafer locations were obtained before and after each polishing period and compared to calculated removal rates.
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About this product
Product Identifiers
PublisherCreative Media Partners
ISBN-101288282591
ISBN-139781288282593
eBay Product ID (ePID)148831142
Product Key Features
Number of Pages110 Pages
LanguageEnglish
Publication NameChemical Mechanical Polishing Optimization for 4h-Sic
SubjectGeneral
Publication Year2012
TypeTextbook
AuthorCraig L. Neslen
Subject AreaEducation
FormatTrade Paperback
Dimensions
Item Height0.2 in
Item Weight7.5 oz.
Item Length9.7 in
Item Width7.4 in
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