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About this product
- Author(s)Alan Owens
- PublisherTaylor & Francis Inc
- Date of Publication25/04/2012
- GenreElectronics Engineering & Communications Engineering
- Series TitleSeries in Sensors
- Place of PublicationWashington
- Country of PublicationUnited States
- ImprintTaylor & Francis Inc
- Content Note165 black & white illustrations, 18 colour illustrations, 45 black & white tables
- Weight906 g
- Width156 mm
- Height235 mm
- Format DetailsUnsewn / adhesive bound
- Table Of ContentsSemiconductors Metals, Semiconductors, and Insulators Energy Band Formation General Properties of the Bandgap Carrier Mobility Effective Mass Carrier Velocity Conduction in Semiconductors Growth Techniques Crystal Lattices Underlying Crystal Structure of Compound Semiconductors Crystal Formation Crystal Defects Crystal Growth Bulk Growth Techniques Discussion Epitaxy Growth Techniques: VPE, LPE, MBE, and MOCVD Detector Fabrication Mechanical Processing Overview Detector Characterization Contacting Systems Metal Semiconductor Interfaces Schottky Barriers Current Transport across a Schottky Barrier Ohmic Contacts Contactless (Proximity Effect) Readout Radiation Detection and Measurement Interaction of Radiation with Matter Charged Particles Neutron Detection X- and Gamma Rays Attenuation and Absorption of Electromagnetic Radiation Radiation Detection Using Compound Semiconductors Present Detection Systems Compound Semiconductors and Radiation Detection Group IV and IV-IV Materials Group III-V Materials Group II-VI Materials Group III-VI Materials Group n-VII Materials Ternary Compounds Other Inorganic Compounds Organic Compounds Discussion Neutron Detection Improving Performance Single Carrier Collection and Correction Techniques Electrode Design and the Near-Field Effect Discussion and Conclusions The Future Appendices A-F All chapters include references.
- Author BiographyDr. Alan Owens has an undergraduate degree in Physics and Physical Electronics and a Doctorate from the University of Durham, United Kingdom, in Astrophysics. He spent 30 years in the design and construction of novel detection systems for X- and gamma-ray astronomy and is currently a staff physicist at the European Space Agency, involved in the development and exploitation of new technologies for space applications. Much of this work revolves around compound semiconductors for radiation detection and measurement, which by its very nature involves materials and systems at a low level of maturity. Consequently, he has been involved in all aspects of a systematic and long-term program on material assessment, production, processing, detector fabrication, and characterization for a large number of compound semiconductors.
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