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Cryogenic Operation of Silicon Power Devices by Ranbir Singh (English) Paperback
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Item specifics
- Condition
- ISBN-13
- 9781461376354
- Book Title
- Cryogenic Operation of Silicon Power Devices
- ISBN
- 9781461376354
- Subject Area
- Technology & Engineering
- Publication Name
- Cryogenic Operation of Silicon Power Devices
- Publisher
- Springer
- Item Length
- 9.3 in
- Subject
- Materials Science / General, Electrical, Materials Science / Electronic Materials
- Publication Year
- 2012
- Series
- Power Electronics and Power Systems Ser.
- Type
- Textbook
- Format
- Trade Paperback
- Language
- English
- Item Weight
- 9.6 Oz
- Item Width
- 6.1 in
- Number of Pages
- Xviii, 148 Pages
About this product
Product Information
The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.
Product Identifiers
Publisher
Springer
ISBN-10
1461376351
ISBN-13
9781461376354
eBay Product ID (ePID)
169584012
Product Key Features
Number of Pages
Xviii, 148 Pages
Language
English
Publication Name
Cryogenic Operation of Silicon Power Devices
Publication Year
2012
Subject
Materials Science / General, Electrical, Materials Science / Electronic Materials
Type
Textbook
Subject Area
Technology & Engineering
Series
Power Electronics and Power Systems Ser.
Format
Trade Paperback
Dimensions
Item Weight
9.6 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Intended Audience
Scholarly & Professional
Dewey Edition
21
Number of Volumes
1 Vol.
Illustrated
Yes
Dewey Decimal
621.3815/28
Lc Classification Number
Tk1-9971
Table of Content
1. Introduction.- 1.1 Advent of Power Cryoelectronics.- 1.2 Cryogenic Power Applications.- 1.3 Advantages of using semiconductor devices at low temperatures.- 1.4 Inferences and Objectives.- 2. Temperature Dependence of Silicon Properties.- 2.1 Semiconductor statistics and carrier Freezeout.- 2.2 Energy bandgap of Silicon.- 2.3 Intrinsic Carrier Concentration.- 2.4 Carrier Mobility.- 2.5 Carrier Lifetime.- 2.6 Breakdown Phenomenon.- 3. Schottky Barrier Diodes.- 3.1 Device Operation.- 3.2 Experimental Results.- 3.3 Optimization of Schottky Barrier Diodes for low temperature operation.- 3.4 Conclusions.- 4. P-I-N Diode.- 4.1 Basic Structure.- 4.2 Experimental Results.- 4.3 Analytical Modeling.- 4.4 Conclusions.- 5. Power Bipolar Transistors.- 5.1 Basic Operation.- 5.2 Experimental Results.- 5.3 Emitter Current Crowding.- 5.4 Transistor Optimization.- 5.5 Conclusions.- 6. Power Mosfets.- 6.1 Device Operation.- 6.2 Carrier freezeout in silicon.- 6.3 Experimental Results.- 6.4 Discussion.- 6.5 Conclusion.- 7. Insulated Gate Bipolar Transistors.- 7.1 Device operation.- 7.2 Experimental results.- 7.3 Conclusion.- 8. Power Junction Field Effect Transistors.- 8.1 Basic Operation.- 8.2 Forward Blocking.- 8.3 Forward Conduction.- 8.4 Conclusions.- 9. Asymmetric Field Controlled Thyristors.- 9.1 Basic Operation.- 9.2 Static Characteristics.- 9.3 Switching Characteristics.- 9.4 Trade-Off curve and Conclusions.- 10. Thyristors.- 10.1 Basic Operation.- 10.2 Static Characteristics.- 10.3 Switching Characteristics.- 10.4 Conclusions.- 11. Synopsis.- 11.1 Design considerations for power devices at 77K.- 11.2 Performance of power devices at 77K.- 11.3 Power devices for cryogenic applications.- References.
Copyright Date
1998
Item description from the seller
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