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Nanoscale Memory Repair by Masashi Horiguchi: New

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Last updated on 16 Dec, 2023 08:09:41 GMTView all revisionsView all revisions

Item specifics

Condition
New: A new, unread, unused book in perfect condition with no missing or damaged pages. See the ...
Book Title
Nanoscale Memory Repair
Publication Date
2011-01-13
Pages
218
ISBN
9781441979575

About this product

Product Identifiers

Publisher
Springer New York
ISBN-10
1441979573
ISBN-13
9781441979575
eBay Product ID (ePID)
102903353

Product Key Features

Number of Pages
X, 218 Pages
Publication Name
Nanoscale Memory Repair
Language
English
Subject
Hardware / General, Cad-Cam, Electronics / Circuits / General, Nanotechnology & Mems
Publication Year
2011
Type
Textbook
Subject Area
Computers, Technology & Engineering
Author
Masashi Horiguchi, Kiyoo Itoh
Series
Integrated Circuits and Systems Ser.
Format
Hardcover

Dimensions

Item Weight
38.8 Oz
Item Length
9.3 in
Item Width
6.1 in

Additional Product Features

Intended Audience
Scholarly & Professional
LCCN
2011-281716
Dewey Edition
22
Number of Volumes
1 vol.
Illustrated
Yes
Dewey Decimal
621.39732
Table Of Content
An Introduction to Repair Techniques: Basics of Redundancy.- Basics of Error Checking and Correction.- Comparison between Redundancy and ECC.- Repairs of Logic Circuits.- Redundancy: Models of Fault Distribution.- Yield Improvement through Redundancy.- Replacement Schemes.- Intra-Subarray Replacement.- Inter-Subarray Replacement.- Subarray Replacement.- Devices for Storing Addresses.- Testing for Redundancy.- Error Checking and Correction: Linear Algebra and Linear Codes.- Galois Field.- Error-Correcting Codes.- Coding and Decoding Circuits.- Theoretical Reduction in Soft-Error and Hard-Error Rates.- Application of ECC.- Testing for ECC.- Synergistic Effect of Redundancy and ECC: Repair of Bit Faults using Synergistic Effect.- Application of Synergistic Effect.
Synopsis
Written from years of experience with developing memories and low-voltage CMOS circuits, Nanoscale Memory Repair describes yield and reliability issues in terms of mathematics and engineering. Readers will find a detailed explanation of the various yield models and calculations., An Introduction to Repair Techniques: Basics of Redundancy.- Basics of Error Checking and Correction.- Comparison between Redundancy and ECC.- Repairs of Logic Circuits.- Redundancy: Models of Fault Distribution.- Yield Improvement through Redundancy.- Replacement Schemes.- Intra-Subarray Replacement.- Inter-Subarray Replacement.- Subarray Replacement.- Devices for Storing Addresses.- Testing for Redundancy.- Error Checking and Correction: Linear Algebra and Linear Codes.- Galois Field.- Error-Correcting Codes.- Coding and Decoding Circuits.- Theoretical Reduction in Soft-Error and Hard-Error Rates.- Application of ECC.- Testing for ECC.- Synergistic Effect of Redundancy and ECC: Repair of Bit Faults using Synergistic Effect.- Application of Synergistic Effect., Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
LC Classification Number
TK7867-7867.5

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