Product Key Features
ConfigurationSingle
Maximum Collector-Emitter Saturation Voltage4 V
Number of Pins3
Minimum DC Amplifier Gain35 dB
Maximum Collector-Base Voltage75 V
Maximum Base-Emitter Voltage6 V
Package/CaseTO-18
Maximum Power Dissipation500 mW
Collector-Emitter Voltage-40 V, 40 V
Number of Elements per Chip1
Maximum Base-Emitter Saturation Voltage2 V
Maximum DC Collector Current2 A
Maximum Operating Temperature200 °C (392 °F)
Mounting StyleThrough-Hole
Transistor CategorySmall Signal Transistor
Minimum Operating Temperature-65 °C (-85 °F)
TypeNPN BJT
Maximum Operating Frequency300 MHz