Product Information
Off state leakage current related power dominates the CMOS heat dissipation problem of state of the art silicon integrated circuits. In this study, this issue has been addressed in terms of a low-cost single wafer processing (SWP) technique using a single tool for the fabrication of high- dielectric gate stacks for sub-45 nm CMOS. A system for monolayer photoassisted deposition was modified to deposit high-quality HfO2 films with in-situ clean, in-situ oxide film deposition, and in-situ anneal capability. The system was automated with Labview 8.2 for gas/precursor delivery, substrate temperature and UV lamp. The gold-hafnium oxide-aluminum (Au-HfO2-Al) stacks processed in this system had superior quality oxide characteristics with gate leakage current density on the order of 1 x 10-12 A/cm2 @ 1V and maximum capacitance on the order of 75 nF for EOT=0.39 nm. Achieving low leakage current density along with high capacitance demonstrated the excellent performance of the process developed. Detailed study of the deposition characteristics such as linearity, saturation behavior, film thickness and temperature dependence was performed for tight control on process parameters. Using Box-Behnken design of experiments, process optimization was performed for an optimal recipe for HfO2 films. UV treatment with in-situ processing of metal/high- dielectric stacks was studied to provide reduced variation in gate leakage current and capacitance. High-resolution transmission electron microscopy (TEM) was performed to calculate the equivalent oxide thickness (EOT) and dielectric constant of the films. Overall, this study shows that the in-situ fabrication of MIS gate stacks allows for lower processing costs, high throughput, and superior device performance.Product Identifiers
PublisherVdm Verlag
ISBN-139783836481564
eBay Product ID (ePID)6046692328
Product Key Features
Number of Pages204 Pages
Publication NameManufacturable Process/Tool for High-κ/Metal Gate
LanguageEnglish
SubjectEngineering & Technology
Publication Year2008
TypeTextbook
AuthorRajendra Singh, Aarthi Venkateshan
FormatPaperback
Dimensions
Item Height229 mm
Item Weight281 g
Additional Product Features
Country/Region of ManufactureGermany
Title_AuthorAarthi Venkateshan, Rajendra Singh